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The applet presents Alpha, Beta and Eta parameters of
Proximity Function
(see Fig.1) for Si or GaAs substrates and PMMA resist for different accelerated
Voltages, resist thicknesses H0, and initial beam sizes Alpha0.
Parameters interpolate experimental data [1].
Shareware NanoMaker-Editor
version provides proximity parameters for more types of substrates.
Fig. 1: Fast electrons expose the resist layer twice entering the
structure and leaving substrate. If exposure dose by entering electrons
is taken 1 then the proximity parameter Eta characteraze exposure
dose of backscattered electrons (electrons which leave the sunstrate).
 0 – e-beam width when reaching resist,
– e-beam width when reaching substrate,
 – e-beam width when leaving resist.
It defines so called proximity distance and actually exposed area.
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