Submicron bismuth (Bi) wires

E. Konstantinov, E. Demidov
Scientific Center ""Nonequilibrium Phenomena in Condensed Matter and Nanostructures", Herzen State Pedagogical University , St. Petersburg, Russia
Equipment: SEM Zeiss EVO 40

Thin film structures of pure bismuth on Sio2 sublayer were patterned by electron beam lithography using negative photoresist ma-N 2403. Series of samples of different thickness with width of the central wire of 0.5-15 microns were created. The structures used to measure the galvanomagnetic properties (resistance, magnetoresistance and Hall coefficient) of thin bismuth films. The study was performeded in temperature range of 77-300 K in applied magnetic fields up to 3.5 T.

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